View larger

KSD2012GTU - Fairchild Semiconductor

Fairchild Semiconductor

KSD2012GTU


Transistors Bipolar - BJT NPN Si Transistor Epitaxial

$ 1.18

1924 1924 Items In Stock

Specification of KSD2012GTU

Series KSD2012
Alternate Part No. 512-KSD2012GTU
Package/Case TO-220F-3
Maximum Operating Temperature + 150 C
Unit Weight 2.270 g
Configuration Single
DC Current Gain hFE Max 320
Maximum DC Collector Current 3 A
Continuous Collector Current 3 A
DC Collector/Base Gain hFE Min 100
Transistor Polarity NPN
Minimum Operating Temperature - 55 C
Packaging Tube
Collector- Emitter Voltage VCEO Max 60 V
Collector- Base Voltage VCBO 60 V
Maximum Power Dissipation 25 W
Mounting Style Through Hole
Emitter- Base Voltage VEBO 7 V
Brand Fairchild Semiconductor
Manufacturer Fairchild Semiconductor
Gain Bandwidth Product fT 3 MHz
Product Category Transistors Bipolar - BJT
Collector-Emitter Saturation Voltage 0.4 V
Manufacturer Part No. KSD2012GTU